Product Center
| Part number： | TRS12V65H,LQ |
|---|---|
| Product classification： | Single Diodes |
| Manufacturer： | Toshiba Electronic Devices and Storage Corporation |
| Type： | G3 SIC-SBD 650V |
| Encapsulation： | - |
| Packing： | Tape & Reel (TR) |
| Quantity： | 4962 |
| RoHS： | 1 |
Quantity
Price
Total price
1
$3.9360
$3.9360
10
$3.3000
$33.0000
100
$2.6760
$267.6000
500
$2.3760
$1,188.0000
1000
$2.0400
$2,040.0000
2500
$1.9200
$4,800.0000
5000
$1.8360
$9,180.0000
| TYPE | DESCRIPTION |
| Mfr | Toshiba Electronic Devices and Storage Corporation |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 4-VSFN Exposed Pad |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 778pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | 4-DFN-EP (8x8) |
| Operating Temperature - Junction | 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 12 A |
| Current - Reverse Leakage @ Vr | 120 µA @ 650 V |
