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RN2910FE,LXHF(CT
  • image of Bipolar Transistor Arrays, Pre-Biased>RN2910FE,LXHF(CT
  • image of Bipolar Transistor Arrays, Pre-Biased>RN2910FE,LXHF(CT
Part number RN2910FE,LXHF(CT
Product classification Bipolar Transistor Arrays, Pre-Biased
Manufacturer Toshiba Electronic Devices and Storage Corporation
Type AUTO AEC-Q 2-IN
Encapsulation -
Packing Tape & Reel (TR)
Quantity 8000
RoHS
Inventory: 8000
Total number

Quantity

Price

Total price

1

$0.4440

$0.4440

4000

$0.0960

$384.0000

8000

$0.0960

$768.0000

12000

$0.0840

$1,008.0000

28000

$0.0840

$2,352.0000

100000

$0.0720

$7,200.0000

Obtain quotation information
image of Bipolar Transistor Arrays, Pre-Biased>RN2910FE,LXHF(CT
image of Bipolar Transistor Arrays, Pre-Biased>RN2910FE,LXHF(CT
Part number
RN2910FE,LXHF(CT
Product classification
Bipolar Transistor Arrays, Pre-Biased
Manufacturer
Toshiba Electronic Devices and Storage Corporation
AUTO AEC-Q 2-IN
-
Tape & Reel (TR)
8000
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrToshiba Electronic Devices and Storage Corporation
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Transistor Type2 PNP - Pre-Biased (Dual)
Power - Max100mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Frequency - Transition200MHz
Resistor - Base (R1)4.7kOhms
Supplier Device PackageES6
GradeAutomotive
QualificationAEC-Q101
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