IPW65R099C6FKSA1
MOSFET N-CH 650V 38A TO247-3
part Number：
IPW65R099C6FKSA1
Alternative Model：
IPW60R041C6FKSA1 , IPW65R065C7XKSA1 , 2EDN7524FXTMA1 , 2EDN7523FXTMA1
manufacturer：
IR (Infineon Technologies)
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 650V 38A TO247-3
RoHS：
YES
IPW65R099C6FKSA1 specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
650 V
Package / Case：
TO-247-3
Power Dissipation (Max)：
278W (Tc)
Supplier Device Package：
PG-TO247-3-1
Current - Continuous Drain (Id) @ 25°C：
38A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
127 nC @ 10 V
Vgs(th) (Max) @ Id：
3.5V @ 1.2mA
Rds On (Max) @ Id, Vgs：
99mOhm @ 12.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
2780 pF @ 100 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
1
8.59
8.59
30
6.86
205.8
120
6.14
736.8
510
5.41
2759.1
1020
4.87
4967.4
2010
4.57
9185.7
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