IPU60R600C6BKMA1
MOSFET N-CH 600V 7.3A TO251-3
part Number：
IPU60R600C6BKMA1
manufacturer：
IR (Infineon Technologies)
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 600V 7.3A TO251-3
RoHS：
YES
IPU60R600C6BKMA1 specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
600 V
Package / Case：
TO-251-3 Short Leads, IPAK, TO-251AA
Supplier Device Package：
PG-TO251-3
Power Dissipation (Max)：
63W (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
440 pF @ 100 V
Current - Continuous Drain (Id) @ 25°C：
7.3A (Tc)
Rds On (Max) @ Id, Vgs：
600mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id：
3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs：
20.5 nC @ 10 V
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