IPU50R1K4CEBKMA1
MOSFET N-CH 500V 3.1A TO251-3
part Number:
IPU50R1K4CEBKMA1
manufacturer:
IR (Infineon Technologies)
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 500V 3.1A TO251-3
RoHS:
NO
IPU50R1K4CEBKMA1 specifications
Mounting Type:
Through Hole
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Vgs (Max):
±20V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Supplier Device Package:
PG-TO251-3
Drain to Source Voltage (Vdss):
500 V
Power Dissipation (Max):
25W (Tc)
Gate Charge (Qg) (Max) @ Vgs:
8.2 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On):
13V
Current - Continuous Drain (Id) @ 25°C:
3.1A (Tc)
Vgs(th) (Max) @ Id:
3.5V @ 70µA
Rds On (Max) @ Id, Vgs:
1.4Ohm @ 900mA, 13V
Input Capacitance (Ciss) (Max) @ Vds:
178 pF @ 100 V
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Standard Pack Quantity:1600
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