IPS65R950C6AKMA1
MOSFET N-CH 650V 4.5A TO251-3
part Number：
IPS65R950C6AKMA1
manufacturer：
IR (Infineon Technologies)
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 650V 4.5A TO251-3
RoHS：
YES
IPS65R950C6AKMA1 specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
650 V
Package / Case：
TO-251-3 Stub Leads, IPAK
Current - Continuous Drain (Id) @ 25°C：
4.5A (Tc)
Power Dissipation (Max)：
37W (Tc)
Rds On (Max) @ Id, Vgs：
950mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs：
15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
328 pF @ 100 V
Vgs(th) (Max) @ Id：
3.5V @ 200µA
Supplier Device Package：
PG-TO251-3-11
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