SQJ456EP-T1_GE3

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SQJ456EP-T1_GE3

MOSFET N-CH 100V 32A PPAK SO-8

part Number：

SQJ456EP-T1_GE3

Alternative Model：

PSMN028-100YS , 115 , PSMN016-100YS , 115 , SQJ479EP-T1_GE3 , SQJ402EP-T1_GE3 , SQJ469EP-T1_GE3

manufacturer：

Vishay / Siliconix

category：

Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >

describe：

MOSFET N-CH 100V 32A PPAK SO-8

RoHS：

YES

：

SQJ456EP-T1_GE3 SQJ456EP-T1_GE3 SQJ456EP-T1_GE3

SQJ456EP-T1_GE3 specifications

Mounting Type：

Surface Mount

Grade：

Automotive

FET Type：

N-Channel

Technology：

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)：

6V, 10V

Vgs (Max)：

±20V

Drain to Source Voltage (Vdss)：

100 V

Operating Temperature：

-55°C ~ 175°C (TJ)

Qualification：

AEC-Q101

Gate Charge (Qg) (Max) @ Vgs：

63 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C：

32A (Tc)

Power Dissipation (Max)：

83W (Tc)

Vgs(th) (Max) @ Id：

3.5V @ 250µA

Supplier Device Package：

PowerPAK® SO-8

Package / Case：

PowerPAK® SO-8

Rds On (Max) @ Id, Vgs：

26mOhm @ 9.3A, 10V

Input Capacitance (Ciss) (Max) @ Vds：

3342 pF @ 25 V

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Quick inquiry

Manufacturer's standard delivery time：be pending

Standard Pack Quantity：6008

quantity

unit price

International prices

3000

2.68

8040

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