SQD25N06-22L_GE3

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SQD25N06-22L_GE3

MOSFET N-CH 60V 25A TO252

part Number：

SQD25N06-22L_GE3

Alternative Model：

LM2675MX-5.0/NOPB , SQD15N06-42L_GE3 , NVD5C684NLT4G , STD35NF06LT4 , STD20NF06LT4 , IPD30N06S4L23ATMA2 , SQD40N06-14L_GE3

manufacturer：

Vishay / Siliconix

category：

Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >

describe：

MOSFET N-CH 60V 25A TO252

RoHS：

YES

：

SQD25N06-22L_GE3 SQD25N06-22L_GE3 SQD25N06-22L_GE3

SQD25N06-22L_GE3 specifications

Mounting Type：

Surface Mount

FET Type：

N-Channel

Technology：

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)：

60 V

Drive Voltage (Max Rds On, Min Rds On)：

4.5V, 10V

Vgs (Max)：

±20V

Vgs(th) (Max) @ Id：

2.5V @ 250µA

Operating Temperature：

-55°C ~ 175°C (TJ)

Package / Case：

TO-252-3, DPAK (2 Leads + Tab), SC-63

Supplier Device Package：

TO-252AA

Gate Charge (Qg) (Max) @ Vgs：

50 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C：

25A (Tc)

Power Dissipation (Max)：

62W (Tc)

Input Capacitance (Ciss) (Max) @ Vds：

1975 pF @ 25 V

Rds On (Max) @ Id, Vgs：

22mOhm @ 20A, 10V

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Quick inquiry

Manufacturer's standard delivery time：be pending

Standard Pack Quantity：5400

quantity

unit price

International prices

2000

0.75

1500

6000

0.7

4200

10000

0.67

6700

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