SI7983DP-T1-GE3

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SI7983DP-T1-GE3

MOSFET 2P-CH 20V 7.7A PPAK SO8

part Number：

SI7983DP-T1-GE3

manufacturer：

Vishay / Siliconix

category：

Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >

describe：

MOSFET 2P-CH 20V 7.7A PPAK SO8

RoHS：

YES

SI7983DP-T1-GE3 specifications

Mounting Type：

Surface Mount

Technology：

MOSFET (Metal Oxide)

FET Feature：

Logic Level Gate

Operating Temperature：

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)：

20V

Configuration：

2 P-Channel (Dual)

Power - Max：

1.4W

Package / Case：

PowerPAK® SO-8 Dual

Supplier Device Package：

PowerPAK® SO-8 Dual

Current - Continuous Drain (Id) @ 25°C：

7.7A

Rds On (Max) @ Id, Vgs：

17mOhm @ 12A, 4.5V

Vgs(th) (Max) @ Id：

1V @ 600µA

Gate Charge (Qg) (Max) @ Vgs：

74nC @ 4.5V

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Quick inquiry

Manufacturer's standard delivery time：be pending

Standard Pack Quantity：1600

quantity

unit price

International prices

3000

1.38

4140

6000

1.32

7920

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