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SI5504BDC-T1-E3
MOSFET N/P-CH 30V 4A/3.7A 1206-8
part Number：
SI5504BDC-T1-E3
Alternative Model：
TPS74301RGWR  ,  SI5504BDC-T1-GE3  ,  TPS54335-1ADRCT  ,  SI5908DC-T1-E3  ,  SI5513CDC-T1-GE3  ,  7442335900  ,  A1CWAM-P04XBC0-0000  ,  TF12S-6S-0.5SH(800)  ,  CP2112-F03-GM  ,  DLW5BTM501SQ2L  ,  GKCWAM-P04UB00-000L  ,  0791091001  ,  CYUSB2304-68LTXI  ,  TPS79433DGNR  ,  FH28-50S-0.5SH(05)
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >
describe：
MOSFET N/P-CH 30V 4A/3.7A 1206-8
RoHS：
YES
：
SI5504BDC-T1-E3     SI5504BDC-T1-E3     SI5504BDC-T1-E3     SI5504BDC-T1-E3     SI5504BDC-T1-E3     SI5504BDC-T1-E3    
SI5504BDC-T1-E3 specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Configuration：
N and P-Channel
FET Feature：
Logic Level Gate
Drain to Source Voltage (Vdss)：
30V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
3V @ 250µA
Supplier Device Package：
1206-8 ChipFET™
Gate Charge (Qg) (Max) @ Vgs：
7nC @ 10V
Rds On (Max) @ Id, Vgs：
65mOhm @ 3.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
220pF @ 15V
Package / Case：
8-SMD, Flat Leads
Current - Continuous Drain (Id) @ 25°C：
4A, 3.7A
Power - Max：
3.12W, 3.1W
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Manufacturer's standard delivery time：be pending
Standard Pack Quantity：15355
quantity
unit price
International prices
3000
0.44
1320
6000
0.42
2520
9000
0.4
3600
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