SI5913DC-T1-GE3
MOSFET P-CH 20V 4A 1206-8
part Number：
SI5913DC-T1-GE3
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET P-CH 20V 4A 1206-8
RoHS：
YES
SI5913DC-T1-GE3 specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Drain to Source Voltage (Vdss)：
20 V
Vgs (Max)：
±12V
Gate Charge (Qg) (Max) @ Vgs：
12 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C：
4A (Tc)
Vgs(th) (Max) @ Id：
1.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds：
330 pF @ 10 V
Supplier Device Package：
1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On)：
2.5V, 10V
FET Feature：
Schottky Diode (Isolated)
Package / Case：
8-SMD, Flat Leads
Rds On (Max) @ Id, Vgs：
84mOhm @ 3.7A, 10V
Power Dissipation (Max)：
1.7W (Ta), 3.1W (Tc)
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Standard Pack Quantity：1600
quantity
unit price
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