SI4778DY-T1-GE3
MOSFET N-CH 25V 8A 8SO
part Number：
SI4778DY-T1-GE3
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 25V 8A 8SO
RoHS：
YES
SI4778DY-T1-GE3 specifications
Mounting Type：
Surface Mount
Supplier Device Package：
8-SOIC
Package / Case：
8-SOIC (0.154", 3.90mm Width)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：
18 nC @ 10 V
Drain to Source Voltage (Vdss)：
25 V
Vgs (Max)：
±16V
Rds On (Max) @ Id, Vgs：
23mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C：
8A (Tc)
Power Dissipation (Max)：
2.4W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
680 pF @ 13 V
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