IRF8910GPBF
MOSFET 2N-CH 20V 10A 8SO
part Number:
IRF8910GPBF
Alternative Model:
IRF8910GTRPBF
manufacturer:
IR (Infineon Technologies)
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >
describe:
MOSFET 2N-CH 20V 10A 8SO
RoHS:
NO
IRF8910GPBF specifications
Mounting Type:
Surface Mount
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:
8-SO
Technology:
MOSFET (Metal Oxide)
FET Feature:
Logic Level Gate
Operating Temperature:
-55°C ~ 150°C (TJ)
Configuration:
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs:
13.4mOhm @ 10A, 10V
Drain to Source Voltage (Vdss):
20V
Power - Max:
2W
Vgs(th) (Max) @ Id:
2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C:
10A
Input Capacitance (Ciss) (Max) @ Vds:
960pF @ 10V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:1600
quantity
unit price
International prices
Kind reminder => Please fill out the form below. We will contact you as soon as possible.
corporate name:
Entercorporate name
Name:
EnterName
phone:
Enterphone
email:
Enteremail
quantity:
Enterquantity
describe:
Enterdescribe
Verification code:
Please enter the verification code