IRF6665TR1
MOSFET N-CH 100V 4.2A DIRECTFET
part Number：
IRF6665TR1
Alternative Model：
IRF6665
manufacturer：
IR (Infineon Technologies)
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 100V 4.2A DIRECTFET
RoHS：
NO
IRF6665TR1 specifications
Mounting Type：
Surface Mount
Operating Temperature：
-40°C ~ 150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Vgs(th) (Max) @ Id：
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：
13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
530 pF @ 25 V
Power Dissipation (Max)：
2.2W (Ta), 42W (Tc)
Current - Continuous Drain (Id) @ 25°C：
4.2A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs：
62mOhm @ 5A, 10V
Supplier Device Package：
DIRECTFET™ SH
Package / Case：
DirectFET™ Isometric SH
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Quick inquiry
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Standard Pack Quantity：1600
quantity
unit price
International prices
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