IRF6655TR1
MOSFET N-CH 100V 4.2A DIRECTFET
part Number:
IRF6655TR1
manufacturer:
IR (Infineon Technologies)
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 100V 4.2A DIRECTFET
RoHS:
NO
IRF6655TR1 specifications
Mounting Type:
Surface Mount
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Vgs (Max):
±20V
Drain to Source Voltage (Vdss):
100 V
Drive Voltage (Max Rds On, Min Rds On):
10V
Input Capacitance (Ciss) (Max) @ Vds:
530 pF @ 25 V
Power Dissipation (Max):
2.2W (Ta), 42W (Tc)
Current - Continuous Drain (Id) @ 25°C:
4.2A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs:
62mOhm @ 5A, 10V
Supplier Device Package:
DIRECTFET™ SH
Package / Case:
DirectFET™ Isometric SH
Gate Charge (Qg) (Max) @ Vgs:
11.7 nC @ 10 V
Vgs(th) (Max) @ Id:
4.8V @ 25µA
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:1600
quantity
unit price
International prices
1000
1.28
1280
2000
1.21
2420
5000
1.17
5850
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