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STB26NM60N
MOSFET N-CH 600V 20A D2PAK
part Number：
STB26NM60N
Alternative Model：
R6024ENJTL  ,  IPB60R180P7ATMA1  ,  AOB27S60L  ,  NVB110N65S3F  ,  DMN3730U-7  ,  FCB20N60FTM  ,  BAT54SFILMY  ,  R6020KNJTL  ,  STB33N65M2  ,  STB24NM60N  ,  STB21N65M5  ,  FCB20N60TM  ,  FDV303N
manufacturer：
STMicroelectronics
category：
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe：
MOSFET N-CH 600V 20A D2PAK
RoHS：
YES
：
STB26NM60N     STB26NM60N     STB26NM60N     STB26NM60N     STB26NM60N     STB26NM60N    
STB26NM60N specifications
Mounting Type：
Surface Mount
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Vgs (Max)：
±30V
Vgs(th) (Max) @ Id：
4V @ 250µA
Supplier Device Package：
TO-263 (D2PAK)
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss)：
600 V
Current - Continuous Drain (Id) @ 25°C：
20A (Tc)
Power Dissipation (Max)：
140W (Tc)
Gate Charge (Qg) (Max) @ Vgs：
60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
1800 pF @ 50 V
Rds On (Max) @ Id, Vgs：
165mOhm @ 10A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：3665
quantity
unit price
International prices
1000
3.84
3840
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