IXFC60N20
MOSFET N-CH 200V 60A ISOPLUS220
IXFC60N20 specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
200 V
Current - Continuous Drain (Id) @ 25°C：
60A (Tc)
Power Dissipation (Max)：
230W (Tc)
Vgs(th) (Max) @ Id：
4V @ 4mA
Supplier Device Package：
ISOPLUS220™
Package / Case：
ISOPLUS220™
Input Capacitance (Ciss) (Max) @ Vds：
5200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：
155 nC @ 10 V
Rds On (Max) @ Id, Vgs：
33mOhm @ 30A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
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