IPD053N08N3GBTMA1
MOSFET N-CH 80V 90A TO252-3
part Number：
IPD053N08N3GBTMA1
manufacturer：
IR (Infineon Technologies)
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 80V 90A TO252-3
RoHS：
NO
IPD053N08N3GBTMA1 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
6V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 175°C (TJ)
Package / Case：
TO-252-3, DPAK (2 Leads + Tab), SC-63
Power Dissipation (Max)：
150W (Tc)
Drain to Source Voltage (Vdss)：
80 V
Current - Continuous Drain (Id) @ 25°C：
90A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
69 nC @ 10 V
Supplier Device Package：
PG-TO252-3
Vgs(th) (Max) @ Id：
3.5V @ 90µA
Rds On (Max) @ Id, Vgs：
5.3mOhm @ 90A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
4750 pF @ 40 V
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Standard Pack Quantity：1600
quantity
unit price
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