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SI7322DN-T1-GE3
MOSFET N-CH 100V 18A PPAK1212-8
part Number：
SI7322DN-T1-GE3
Alternative Model：
SI7322DN-T1-E3  ,  DMN10H170SFG-7  ,  SIR186DP-T1-RE3  ,  SIS443DN-T1-GE3  ,  DMT10H072LFV-7  ,  1.14.002.111/0000  ,  IRFHM3911TRPBF  ,  LTM4607EV#PBF  ,  DMN10H099SFG-7  ,  SI3493BDV-T1-E3  ,  FDMC8622
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe：
MOSFET N-CH 100V 18A PPAK1212-8
RoHS：
YES
：
SI7322DN-T1-GE3     SI7322DN-T1-GE3    
SI7322DN-T1-GE3 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Supplier Device Package：
PowerPAK® 1212-8
Package / Case：
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs：
20 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C：
18A (Tc)
Power Dissipation (Max)：
3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id：
4.4V @ 250µA
Rds On (Max) @ Id, Vgs：
58mOhm @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
750 pF @ 50 V
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Manufacturer's standard delivery time：be pending
Standard Pack Quantity：18021
quantity
unit price
International prices
3000
0.75
2250
6000
0.72
4320
9000
0.68
6120
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