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BSZ097N04LSGATMA1
MOSFET N-CH 40V 12A/40A 8TSDSON
part Number：
BSZ097N04LSGATMA1
Alternative Model：
IRS10752LTRPBF  ,  1ED44173N01BXTSA1  ,  6EDL04N02PRXUMA1  ,  IRS21271STRPBF  ,  IRS4427STRPBF  ,  IRS2007STRPBF  ,  2ED2101S06FXUMA1  ,  2ED2106S06FXUMA1  ,  BSC093N04LSGATMA1  ,  BSZ099N06LS5ATMA1  ,  B82472D6473M000  ,  BSZ040N04LSGATMA1  ,  BSC027N04LSGATMA1  ,  0532610271  ,  RCLAMP3371ZCTFT  ,  BSC059N04LSGATMA1  ,  FLE-112-01-G-DV-K-TR  ,  435171014816  ,  BSZ063N04LS6ATMA1  ,  BSC123N08NS3GATMA1  ,  709176001501006  ,  FDV303N  ,  ISL80111IRAJZ
manufacturer：
IR (Infineon Technologies)
category：
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe：
MOSFET N-CH 40V 12A/40A 8TSDSON
RoHS：
YES
：
BSZ097N04LSGATMA1     BSZ097N04LSGATMA1     BSZ097N04LSGATMA1    
BSZ097N04LSGATMA1 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
40 V
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs：
24 nC @ 10 V
Supplier Device Package：
PG-TSDSON-8
Vgs(th) (Max) @ Id：
2V @ 14µA
Input Capacitance (Ciss) (Max) @ Vds：
1900 pF @ 20 V
Rds On (Max) @ Id, Vgs：
9.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C：
12A (Ta), 40A (Tc)
Power Dissipation (Max)：
2.1W (Ta), 35W (Tc)
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Manufacturer's standard delivery time：be pending
Standard Pack Quantity：8854
quantity
unit price
International prices
5000
0.37
1850
10000
0.34
3400
25000
0.34
8500
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