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IRF1018ESTRLPBF
MOSFET N-CH 60V 79A D2PAK
part Number：
IRF1018ESTRLPBF
Alternative Model：
IRF1018ESPBF  ,  IRS10752LTRPBF  ,  1ED44173N01BXTSA1  ,  IRS2011STRPBF  ,  6EDL04N02PRXUMA1  ,  IRS21271STRPBF  ,  IRS4427STRPBF  ,  2EDL23N06PJXUMA1  ,  MEM1608D201RT001  ,  IRFS3806TRLPBF  ,  IPL1-102-01-L-S-K  ,  BAT-HLD-001-THM  ,  FXL6408UMX  ,  693071030811  ,  HUF75545S3ST  ,  742C083473JP  ,  AP2202K-ADJTRG1  ,  KSC221JLFS  ,  BMP581  ,  TXU0101DCKR  ,  MAX3232EESE+  ,  ADS1014IRUGT  ,  MCP1801T-0902I/OT
manufacturer：
IR (Infineon Technologies)
category：
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe：
MOSFET N-CH 60V 79A D2PAK
RoHS：
YES
：
IRF1018ESTRLPBF     IRF1018ESTRLPBF     IRF1018ESTRLPBF     IRF1018ESTRLPBF     IRF1018ESTRLPBF    
IRF1018ESTRLPBF specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
60 V
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 175°C (TJ)
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：
D2PAK
Power Dissipation (Max)：
110W (Tc)
Current - Continuous Drain (Id) @ 25°C：
79A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
69 nC @ 10 V
Rds On (Max) @ Id, Vgs：
8.4mOhm @ 47A, 10V
Vgs(th) (Max) @ Id：
4V @ 100µA
Input Capacitance (Ciss) (Max) @ Vds：
2290 pF @ 50 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：10425
quantity
unit price
International prices
800
0.95
760
1600
0.77
1232
2400
0.73
1752
5600
0.69
3864
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