IXFH9N80
MOSFET N-CH 800V 9A TO247AD
IXFH9N80 specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
TO-247-3
Current - Continuous Drain (Id) @ 25°C：
9A (Tc)
Supplier Device Package：
TO-247AD (IXFH)
Drain to Source Voltage (Vdss)：
800 V
Gate Charge (Qg) (Max) @ Vgs：
130 nC @ 10 V
Power Dissipation (Max)：
180W (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
2600 pF @ 25 V
Vgs(th) (Max) @ Id：
4.5V @ 2.5mA
Rds On (Max) @ Id, Vgs：
900mOhm @ 500mA, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
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