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FDP090N10
MOSFET N-CH 100V 75A TO220-3
part Number：
FDP090N10
Alternative Model：
FDP050AN06A0  ,  TC4424AVOA713  ,  ADR444BRZ  ,  TPS54560QDDAQ1  ,  TL598CDR  ,  5.0SMDJ75CA-T7  ,  B82720A2301N040  ,  ASSR-5211-301E  ,  IXTA230N075T2-7  ,  VS-15MQ040NTRPBF  ,  ADUM1401BRWZ  ,  THS4032IDGNR
manufacturer：
Sanyo Semiconductor/onsemi
category：
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe：
MOSFET N-CH 100V 75A TO220-3
RoHS：
YES
：
FDP090N10     FDP090N10     FDP090N10     FDP090N10     FDP090N10     FDP090N10     FDP090N10     FDP090N10    
FDP090N10 specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Package / Case：
TO-220-3
Operating Temperature：
-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id：
4.5V @ 250µA
Supplier Device Package：
TO-220-3
Current - Continuous Drain (Id) @ 25°C：
75A (Tc)
Rds On (Max) @ Id, Vgs：
9mOhm @ 75A, 10V
Power Dissipation (Max)：
208W (Tc)
Gate Charge (Qg) (Max) @ Vgs：
116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
8225 pF @ 25 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：13614
quantity
unit price
International prices
1
2.68
2.68
50
2.12
106
100
1.82
182
500
1.78
890
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