2N7002ET3G
MOSFET N-CH 60V 260MA SOT23-3
part Number：
2N7002ET3G
Alternative Model：
2N7002ET1G , 2N7002ET7G , M80-5132022 , TPS73633DRBT , BAS116-7-F
manufacturer：
Sanyo Semiconductor/onsemi
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 60V 260MA SOT23-3
RoHS：
NO
2N7002ET3G specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
60 V
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
2.5V @ 250µA
Package / Case：
TO-236-3, SC-59, SOT-23-3
Supplier Device Package：
SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C：
260mA (Ta)
Rds On (Max) @ Id, Vgs：
2.5Ohm @ 240mA, 10V
Gate Charge (Qg) (Max) @ Vgs：
0.81 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds：
26.7 pF @ 25 V
Power Dissipation (Max)：
300mW (Tj)
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Standard Pack Quantity：1600
quantity
unit price
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