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FDC365P
MOSFET P-CH 35V 4.3A SUPERSOT6
part Number：
FDC365P
Alternative Model：
MURD620CTT4G  ,  1N4148WT-7  ,  PMV37EN2R  ,  H130B-50.000-16-F-1010-TR  ,  FCPF150N65F  ,  B02B-PASK-1  ,  1812L300MR  ,  SI7129DN-T1-GE3  ,  0713490040  ,  NCV7471ADQ5R2G  ,  LG R971-KN-1-0-20-R18  ,  NCV8537MN180R2G  ,  LS R976-NR-1-0-20-R18  ,  MBR2H200SFT1G  ,  FDC610PZ
manufacturer：
Sanyo Semiconductor/onsemi
category：
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe：
MOSFET P-CH 35V 4.3A SUPERSOT6
RoHS：
YES
：
FDC365P     FDC365P     FDC365P     FDC365P     FDC365P     FDC365P     FDC365P     FDC365P     FDC365P    
FDC365P specifications
Mounting Type：
Surface Mount
Package / Case：
SOT-23-6 Thin, TSOT-23-6
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Vgs(th) (Max) @ Id：
3V @ 250µA
Supplier Device Package：
SuperSOT™-6
Power Dissipation (Max)：
1.6W (Ta)
Gate Charge (Qg) (Max) @ Vgs：
15 nC @ 10 V
Drain to Source Voltage (Vdss)：
35 V
Current - Continuous Drain (Id) @ 25°C：
4.3A (Ta)
Rds On (Max) @ Id, Vgs：
55mOhm @ 4.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
705 pF @ 20 V
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