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FDB28N30TM
MOSFET N-CH 300V 28A D2PAK
part Number：
FDB28N30TM
Alternative Model：
MURS115T3G  ,  1571983-5  ,  B72207S0151K101  ,  IPB17N25S3100ATMA1  ,  SK220A  ,  LTC3864HDE#PBF  ,  IXFQ120N25X3  ,  TPMR10D  ,  B2B-XH-AM  ,  ISO1050DUBR  ,  T2N7002AK  ,  LM  ,  726386-2  ,  TL494BDR2G  ,  TLP183(GB-TPL  ,  E  ,  RN112-4-02-0M7
manufacturer：
Sanyo Semiconductor/onsemi
category：
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe：
MOSFET N-CH 300V 28A D2PAK
RoHS：
YES
：
FDB28N30TM     FDB28N30TM     FDB28N30TM     FDB28N30TM     FDB28N30TM     FDB28N30TM     FDB28N30TM     FDB28N30TM    
FDB28N30TM specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs (Max)：
±30V
Vgs(th) (Max) @ Id：
5V @ 250µA
Supplier Device Package：
TO-263 (D2PAK)
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs：
50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
2250 pF @ 25 V
Power Dissipation (Max)：
250W (Tc)
Current - Continuous Drain (Id) @ 25°C：
28A (Tc)
Drain to Source Voltage (Vdss)：
300 V
Rds On (Max) @ Id, Vgs：
129mOhm @ 14A, 10V
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Manufacturer's standard delivery time：be pending
Standard Pack Quantity：2341
quantity
unit price
International prices
800
1.3
1040
1600
1.1
1760
2400
1.05
2520
5600
1
5600
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