SI4511DY-T1-E3

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SI4511DY-T1-E3

MOSFET N/P-CH 20V 7.2A 8-SOIC

part Number：

SI4511DY-T1-E3

Alternative Model：

DMC2020USD-13

manufacturer：

Vishay / Siliconix

category：

Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >

describe：

MOSFET N/P-CH 20V 7.2A 8-SOIC

RoHS：

YES

：

SI4511DY-T1-E3

SI4511DY-T1-E3 specifications

Mounting Type：

Surface Mount

Supplier Device Package：

8-SOIC

Package / Case：

8-SOIC (0.154", 3.90mm Width)

Technology：

MOSFET (Metal Oxide)

Configuration：

N and P-Channel

FET Feature：

Logic Level Gate

Vgs(th) (Max) @ Id：

1.8V @ 250µA

Drain to Source Voltage (Vdss)：

20V

Power - Max：

1.1W

Gate Charge (Qg) (Max) @ Vgs：

18nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C：

7.2A, 4.6A

Rds On (Max) @ Id, Vgs：

14.5mOhm @ 9.6A, 10V

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Standard Pack Quantity：1600

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