SI8429DB-T1-E1
MOSFET P-CH 8V 11.7A 4MICROFOOT
part Number：
SI8429DB-T1-E1
Alternative Model：
NRF52832-CIAA-R7 , DMP21D0UT-7 , SI8823EDB-T2-E1 , TPS62801YKAT , DRV2605YZFR , SSM3J328R , LF , EYSHSNZWZ , MCP73123-22SI/MF , USB4125-GF-A-0190 , 150066M153000
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET P-CH 8V 11.7A 4MICROFOOT
RoHS：
YES
SI8429DB-T1-E1 specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Drive Voltage (Max Rds On, Min Rds On)：
1.2V, 4.5V
Drain to Source Voltage (Vdss)：
8 V
Supplier Device Package：
4-Microfoot
Package / Case：
4-XFBGA, CSPBGA
Vgs(th) (Max) @ Id：
800mV @ 250µA
Vgs (Max)：
±5V
Gate Charge (Qg) (Max) @ Vgs：
26 nC @ 5 V
Rds On (Max) @ Id, Vgs：
35mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C：
11.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
1640 pF @ 4 V
Power Dissipation (Max)：
2.77W (Ta), 6.25W (Tc)
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：21494
quantity
unit price
International prices
3000
0.45
1350
6000
0.43
2580
9000
0.42
3780
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