SI8409DB-T1-E1
MOSFET P-CH 30V 4.6A 4MICROFOOT
part Number:
SI8409DB-T1-E1
Alternative Model:
ABS05-32.768KHZ-9-T  ,  LT1638IDD#TRPBF  ,  M2GL060T-FGG484I  ,  ADM803SAKSZ-REEL  ,  LTC1864LIMS8#PBF  ,  TPS62140RGTR  ,  OMAPL138EZCEA3  ,  MIC23030-GYMT-TR  ,  PBHV8515QAZ  ,  FM22LD16-55-BG  ,  ADP151ACPZ-1.8-R7  ,  SIS407DN-T1-GE3  ,  MT29F32G08ABCABH1-10ITZ:A  ,  ADG1606BCPZ-REEL7  ,  ECS-2033-240-BN
manufacturer:
Vishay / Siliconix
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET P-CH 30V 4.6A 4MICROFOOT
RoHS:
YES
SI8409DB-T1-E1 specifications
Mounting Type:
Surface Mount
Technology:
MOSFET (Metal Oxide)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drain to Source Voltage (Vdss):
30 V
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Vgs (Max):
±12V
Supplier Device Package:
4-Microfoot
Package / Case:
4-XFBGA, CSPBGA
Vgs(th) (Max) @ Id:
1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
26 nC @ 4.5 V
Power Dissipation (Max):
1.47W (Ta)
Current - Continuous Drain (Id) @ 25°C:
4.6A (Ta)
Rds On (Max) @ Id, Vgs:
46mOhm @ 1A, 4.5V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:9088
quantity
unit price
International prices
3000
0.48
1440
6000
0.46
2760
9000
0.44
3960
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