SI7942DP-T1-E3

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SI7942DP-T1-E3

MOSFET 2N-CH 100V 3.8A PPAK SO8

part Number：

SI7942DP-T1-E3

Alternative Model：

LTC4367IMS8#PBF , LSHM-150-04.0-L-DV-A-S-K-TR , SQJ974EP-T1_GE3 , SI2369BDS-T1-GE3 , LTC4367HMS8#TRPBF , LTC4367IDD#PBF , SISB46DN-T1-GE3 , ICM-20649 , PMV20XNEAR , SI4946BEY-T1-GE3 , THN 30-2412WI , SH8K32TB1 , QSC15024S24 , TSX-3225 24.0000MF15X-AC3 , M50-3530442

manufacturer：

Vishay / Siliconix

category：

Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >

describe：

MOSFET 2N-CH 100V 3.8A PPAK SO8

RoHS：

YES

：

SI7942DP-T1-E3 SI7942DP-T1-E3

SI7942DP-T1-E3 specifications

Mounting Type：

Surface Mount

Technology：

MOSFET (Metal Oxide)

FET Feature：

Logic Level Gate

Operating Temperature：

-55°C ~ 150°C (TJ)

Vgs(th) (Max) @ Id：

4V @ 250µA

Configuration：

2 N-Channel (Dual)

Drain to Source Voltage (Vdss)：

100V

Power - Max：

1.4W

Package / Case：

PowerPAK® SO-8 Dual

Supplier Device Package：

PowerPAK® SO-8 Dual

Gate Charge (Qg) (Max) @ Vgs：

24nC @ 10V

Current - Continuous Drain (Id) @ 25°C：

3.8A

Rds On (Max) @ Id, Vgs：

49mOhm @ 5.9A, 10V

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Manufacturer's standard delivery time：be pending

Standard Pack Quantity：4304

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8640

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