SI7922DN-T1-E3

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SI7922DN-T1-E3

MOSFET 2N-CH 100V 1.8A PPAK 1212

part Number：

SI7922DN-T1-E3

Alternative Model：

TPN2010FNH , L1Q , TMP05AKSZ-REEL7 , NSR10F40NXT5G , APV2111VY

manufacturer：

Vishay / Siliconix

category：

Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >

describe：

MOSFET 2N-CH 100V 1.8A PPAK 1212

RoHS：

YES

：

SI7922DN-T1-E3 SI7922DN-T1-E3

SI7922DN-T1-E3 specifications

Mounting Type：

Surface Mount

Technology：

MOSFET (Metal Oxide)

FET Feature：

Logic Level Gate

Operating Temperature：

-55°C ~ 150°C (TJ)

Configuration：

2 N-Channel (Dual)

Vgs(th) (Max) @ Id：

3.5V @ 250µA

Drain to Source Voltage (Vdss)：

100V

Current - Continuous Drain (Id) @ 25°C：

1.8A

Power - Max：

1.3W

Package / Case：

PowerPAK® 1212-8 Dual

Supplier Device Package：

PowerPAK® 1212-8 Dual

Gate Charge (Qg) (Max) @ Vgs：

8nC @ 10V

Rds On (Max) @ Id, Vgs：

195mOhm @ 2.5A, 10V

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Quick inquiry

Manufacturer's standard delivery time：be pending

Standard Pack Quantity：2885

quantity

unit price

International prices

3000

0.85

2550

6000

0.81

4860

9000

0.78

7020

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