SI7846DP-T1-E3
MOSFET N-CH 150V 4A PPAK SO-8
part Number:
SI7846DP-T1-E3
Alternative Model:
CMPD2838 TR PBFREE  ,  SI7846DP-T1-GE3  ,  ZXMN10B08E6TA  ,  P8208NL  ,  BZX84J-C15  ,  115  ,  DAMC-7H2P-J-K87  ,  SI7898DP-T1-E3  ,  FDMS86252  ,  PBSS9410PA  ,  115  ,  BAS70-04-7-F  ,  BSC360N15NS3GATMA1  ,  PBSS8510PA  ,  115  ,  BAS16-7-F  ,  SRF1260-100M  ,  ZVN3320FTA
manufacturer:
Vishay / Siliconix
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 150V 4A PPAK SO-8
RoHS:
YES
SI7846DP-T1-E3 specifications
Mounting Type:
Surface Mount
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
10V
Operating Temperature:
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Drain to Source Voltage (Vdss):
150 V
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Supplier Device Package:
PowerPAK® SO-8
Package / Case:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
36 nC @ 10 V
Rds On (Max) @ Id, Vgs:
50mOhm @ 5A, 10V
Power Dissipation (Max):
1.9W (Ta)
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:18496
quantity
unit price
International prices
3000
1.17
3510
6000
1.12
6720
9000
1.09
9810
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