SI7820DN-T1-E3
MOSFET N-CH 200V 1.7A PPAK1212-8
part Number:
SI7820DN-T1-E3
Alternative Model:
PR20B05VBDN  ,  HV816K6-G  ,  SI7153DN-T1-GE3  ,  FDMC86248  ,  SIR474DP-T1-GE3  ,  SI9435BDY-T1-GE3  ,  SISA14DN-T1-GE3  ,  SIR416DP-T1-GE3  ,  68611414122  ,  VESD03A1B-HD1-GS08  ,  0511100660  ,  SI7119DN-T1-E3  ,  SI7812DN-T1-GE3
manufacturer:
Vishay / Siliconix
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 200V 1.7A PPAK1212-8
RoHS:
YES
SI7820DN-T1-E3 specifications
Mounting Type:
Surface Mount
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Vgs (Max):
±20V
Operating Temperature:
-55°C ~ 150°C (TJ)
Power Dissipation (Max):
1.5W (Ta)
Vgs(th) (Max) @ Id:
4V @ 250µA
Supplier Device Package:
PowerPAK® 1212-8
Package / Case:
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 10 V
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
1.7A (Ta)
Rds On (Max) @ Id, Vgs:
240mOhm @ 2.6A, 10V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:9609
quantity
unit price
International prices
3000
0.74
2220
6000
0.72
4320
9000
0.69
6210
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