SI7810DN-T1-E3
MOSFET N-CH 100V 3.4A PPAK1212-8
part Number：
SI7810DN-T1-E3
Alternative Model：
HX6062NLT , 1155580000 , TPS23861PWR , SI7810DN-T1-GE3 , LTC6991HS6#WTRMPBF , 74LVC2G14DW-7 , V3FM10HM3/H , LT3756JMSE-2#WPBF , OKL-T/3-W12P-C , SMAJ51CA-Q , ABM3-25.000MHZ-D2Y-T , SZ1SMA70CAT3G , B190B-13-F , BC846AW-7-F , 2744051447
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 100V 3.4A PPAK1212-8
RoHS：
YES
SI7810DN-T1-E3 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
6V, 10V
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Operating Temperature：
-55°C ~ 150°C (TJ)
Power Dissipation (Max)：
1.5W (Ta)
Vgs(th) (Max) @ Id：
4.5V @ 250µA
Supplier Device Package：
PowerPAK® 1212-8
Package / Case：
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs：
17 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C：
3.4A (Ta)
Rds On (Max) @ Id, Vgs：
62mOhm @ 5.4A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：10358
quantity
unit price
International prices
3000
0.66
1980
6000
0.63
3780
9000
0.61
5490
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