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SI7113DN-T1-E3
MOSFET P-CH 100V 13.2A PPAK
part Number：
SI7113DN-T1-E3
Alternative Model：
SI7113DN-T1-GE3  ,  CPC1114N  ,  SISS71DN-T1-GE3  ,  BAT43W-E3-08  ,  CXP-3R0224R-TWX  ,  SI7113ADN-T1-GE3  ,  INN3166C-H102-TL  ,  DFLS1100-7  ,  EVP-BK4A1B000  ,  MMBT2907AWT1G  ,  AO3442  ,  DMN10H120SFG-13  ,  UPS5819E3/TR7  ,  TCMT1107  ,  PMV280ENEAR
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe：
MOSFET P-CH 100V 13.2A PPAK
RoHS：
YES
：
SI7113DN-T1-E3     SI7113DN-T1-E3    
SI7113DN-T1-E3 specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
FET Type：
P-Channel
Operating Temperature：
-50°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
3V @ 250µA
Supplier Device Package：
PowerPAK® 1212-8
Package / Case：
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs：
55 nC @ 10 V
Power Dissipation (Max)：
3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
1480 pF @ 50 V
Current - Continuous Drain (Id) @ 25°C：
13.2A (Tc)
Rds On (Max) @ Id, Vgs：
134mOhm @ 4A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：18197
quantity
unit price
International prices
3000
1.39
4170
6000
1.34
8040
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