SI5920DC-T1-E3
MOSFET 2N-CH 8V 4A 1206-8
part Number：
SI5920DC-T1-E3
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
FET, MOSFET Arrays >
describe：
MOSFET 2N-CH 8V 4A 1206-8
RoHS：
YES
SI5920DC-T1-E3 specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
FET Feature：
Logic Level Gate
Operating Temperature：
-55°C ~ 150°C (TJ)
Configuration：
2 N-Channel (Dual)
Vgs(th) (Max) @ Id：
1V @ 250µA
Drain to Source Voltage (Vdss)：
8V
Supplier Device Package：
1206-8 ChipFET™
Current - Continuous Drain (Id) @ 25°C：
4A
Gate Charge (Qg) (Max) @ Vgs：
12nC @ 5V
Power - Max：
3.12W
Package / Case：
8-SMD, Flat Leads
Rds On (Max) @ Id, Vgs：
32mOhm @ 6.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds：
680pF @ 4V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
3000
0.48
1440
6000
0.46
2760
9000
0.44
3960
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