SI5908DC-T1-E3
MOSFET 2N-CH 20V 4.4A 1206-8
part Number：
SI5908DC-T1-E3
Alternative Model：
SI5935CDC-T1-GE3 , SI5902BDC-T1-E3 , DP83620SQE/NOPB , SI5504BDC-T1-E3 , SI1026X-T1-GE3 , SI4174DY-T1-GE3
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
FET, MOSFET Arrays >
describe：
MOSFET 2N-CH 20V 4.4A 1206-8
RoHS：
YES
SI5908DC-T1-E3 specifications
Mounting Type：
Surface Mount
Package / Case：
8-SMD, Flat Lead
Technology：
MOSFET (Metal Oxide)
FET Feature：
Logic Level Gate
Operating Temperature：
-55°C ~ 150°C (TJ)
Configuration：
2 N-Channel (Dual)
Vgs(th) (Max) @ Id：
1V @ 250µA
Drain to Source Voltage (Vdss)：
20V
Power - Max：
1.1W
Supplier Device Package：
1206-8 ChipFET™
Gate Charge (Qg) (Max) @ Vgs：
7.5nC @ 4.5V
Rds On (Max) @ Id, Vgs：
40mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C：
4.4A
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：3948
quantity
unit price
International prices
3000
0.61
1830
6000
0.58
3480
9000
0.55
4950
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