SI5515DC-T1-E3

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SI5515DC-T1-E3

MOSFET N/P-CH 20V 4.4A/3A 1206-8

part Number：

SI5515DC-T1-E3

Alternative Model：

NTHD3100CT1G , NJVMJD32T4G , TT8M2TR , LM5155QDSSRQ1 , SI5515CDC-T1-E3 , SI7868ADP-T1-E3 , SI1865DDL-T1-GE3 , SI4816BDY-T1-E3 , RB520S-30-TP , SI4874BDY-T1-E3 , VNN7NV04PTR-E , LM5155QDSSTQ1 , MBRS340T3G , WF200C , SN74CBTLV1G125DCKR

manufacturer：

Vishay / Siliconix

category：

Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >

describe：

MOSFET N/P-CH 20V 4.4A/3A 1206-8

RoHS：

YES

：

SI5515DC-T1-E3 SI5515DC-T1-E3 SI5515DC-T1-E3

SI5515DC-T1-E3 specifications

Mounting Type：

Surface Mount

Package / Case：

8-SMD, Flat Lead

Technology：

MOSFET (Metal Oxide)

Configuration：

N and P-Channel

FET Feature：

Logic Level Gate

Operating Temperature：

-55°C ~ 150°C (TJ)

Vgs(th) (Max) @ Id：

1V @ 250µA

Drain to Source Voltage (Vdss)：

20V

Power - Max：

1.1W

Supplier Device Package：

1206-8 ChipFET™

Gate Charge (Qg) (Max) @ Vgs：

7.5nC @ 4.5V

Rds On (Max) @ Id, Vgs：

40mOhm @ 4.4A, 4.5V

Current - Continuous Drain (Id) @ 25°C：

4.4A, 3A

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Standard Pack Quantity：1600

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