SI5513DC-T1-E3
MOSFET N/P-CH 20V 3.1A 1206-8
part Number：
SI5513DC-T1-E3
Alternative Model：
SI5515CDC-T1-GE3 , NVTFS5C466NLTAG , LTC4368HMS-1#PBF , BAS21HT1G , LTC3891MPFE#PBF
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
FET, MOSFET Arrays >
describe：
MOSFET N/P-CH 20V 3.1A 1206-8
RoHS：
YES
SI5513DC-T1-E3 specifications
Mounting Type：
Surface Mount
Package / Case：
8-SMD, Flat Lead
Technology：
MOSFET (Metal Oxide)
Configuration：
N and P-Channel
FET Feature：
Logic Level Gate
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
20V
Vgs(th) (Max) @ Id：
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：
6nC @ 4.5V
Power - Max：
1.1W
Supplier Device Package：
1206-8 ChipFET™
Rds On (Max) @ Id, Vgs：
75mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C：
3.1A, 2.1A
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Standard Pack Quantity：1600
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