SI5441BDC-T1-E3
MOSFET P-CH 20V 4.4A 1206-8
part Number：
SI5441BDC-T1-E3
Alternative Model：
MK-362-069-435-220S
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET P-CH 20V 4.4A 1206-8
RoHS：
YES
SI5441BDC-T1-E3 specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Drive Voltage (Max Rds On, Min Rds On)：
2.5V, 4.5V
Drain to Source Voltage (Vdss)：
20 V
Vgs (Max)：
±12V
Supplier Device Package：
1206-8 ChipFET™
Power Dissipation (Max)：
1.3W (Ta)
Gate Charge (Qg) (Max) @ Vgs：
22 nC @ 4.5 V
Vgs(th) (Max) @ Id：
1.4V @ 250µA
Current - Continuous Drain (Id) @ 25°C：
4.4A (Ta)
Rds On (Max) @ Id, Vgs：
45mOhm @ 4.4A, 4.5V
Package / Case：
8-SMD, Flat Leads
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
3000
0.52
1560
6000
0.5
3000
9000
0.47
4230
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