SI5424DC-T1-E3
MOSFET N-CH 30V 6A 1206-8
part Number：
SI5424DC-T1-E3
Alternative Model：
SI5424DC-T1-GE3
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 30V 6A 1206-8
RoHS：
YES
SI5424DC-T1-E3 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
30 V
Vgs (Max)：
±25V
Current - Continuous Drain (Id) @ 25°C：
6A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
32 nC @ 10 V
Vgs(th) (Max) @ Id：
2.3V @ 250µA
Supplier Device Package：
1206-8 ChipFET™
Input Capacitance (Ciss) (Max) @ Vds：
950 pF @ 15 V
Package / Case：
8-SMD, Flat Leads
Rds On (Max) @ Id, Vgs：
24mOhm @ 4.8A, 10V
Power Dissipation (Max)：
2.5W (Ta), 6.25W (Tc)
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Standard Pack Quantity：1600
quantity
unit price
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