SI4925BDY-T1-E3
MOSFET 2P-CH 30V 5.3A 8SOIC
part Number:
SI4925BDY-T1-E3
Alternative Model:
STD60NF06T4  ,  PMEG60T50ELPX  ,  SI4925BDY-T1-GE3  ,  AO4813  ,  STD10NF30  ,  RLP-40+  ,  SI2318CDS-T1-GE3  ,  TJA1044GT/3Z  ,  SI4435DDY-T1-E3  ,  ICM-42605  ,  MBRM140T3G  ,  SB840  ,  PMBT3904  ,  215  ,  LTC3864HMSE#PBF  ,  FDS4935BZ
manufacturer:
Vishay / Siliconix
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >
describe:
MOSFET 2P-CH 30V 5.3A 8SOIC
RoHS:
YES
SI4925BDY-T1-E3 specifications
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Technology:
MOSFET (Metal Oxide)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Operating Temperature:
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id:
3V @ 250µA
Configuration:
2 P-Channel (Dual)
Power - Max:
1.1W
Current - Continuous Drain (Id) @ 25°C:
5.3A
Gate Charge (Qg) (Max) @ Vgs:
50nC @ 10V
Rds On (Max) @ Id, Vgs:
25mOhm @ 7.1A, 10V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:11079
quantity
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International prices
2500
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1600
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0.61
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0.58
7250
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