SI4914DY-T1-E3

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SI4914DY-T1-E3

MOSFET 2N-CH 30V 5.5A/5.7A 8SOIC

part Number：

SI4914DY-T1-E3

manufacturer：

Vishay / Siliconix

category：

Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >

describe：

MOSFET 2N-CH 30V 5.5A/5.7A 8SOIC

RoHS：

YES

：

SI4914DY-T1-E3

SI4914DY-T1-E3 specifications

Mounting Type：

Surface Mount

Supplier Device Package：

8-SOIC

Package / Case：

8-SOIC (0.154", 3.90mm Width)

Technology：

MOSFET (Metal Oxide)

FET Feature：

Logic Level Gate

Drain to Source Voltage (Vdss)：

30V

Operating Temperature：

-55°C ~ 150°C (TJ)

Vgs(th) (Max) @ Id：

2.5V @ 250µA

Configuration：

2 N-Channel (Half Bridge)

Rds On (Max) @ Id, Vgs：

23mOhm @ 7A, 10V

Power - Max：

1.1W, 1.16W

Gate Charge (Qg) (Max) @ Vgs：

8.5nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C：

5.5A, 5.7A

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Quick inquiry

Manufacturer's standard delivery time：be pending

Standard Pack Quantity：1600

quantity

unit price

International prices

2500

0.8

2000

5000

0.77

3850

12500

0.74

9250

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