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SI4900DY-T1-E3
MOSFET 2N-CH 60V 5.3A 8SOIC
part Number：
SI4900DY-T1-E3
Alternative Model：
DA7217-00U32  ,  R7FA6M3AH3CLK#AC0  ,  DF65-6P-1.7V(21)  ,  AP63203WU-7  ,  MCP2515T-I/ML  ,  SH8K32GZETB  ,  AP63205WU-7  ,  PPPC202LFBN-RC  ,  SMF4L33CA  ,  DF2S6.2CT  ,  L3F  ,  KSZ8091RNAIA-TR  ,  ALT3232M-151-T001  ,  ECS-80-12-33-JGN-TR  ,  TLV73325PQDRVRQ1  ,  TCAN1042VDRBTQ1
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >
describe：
MOSFET 2N-CH 60V 5.3A 8SOIC
RoHS：
YES
：
SI4900DY-T1-E3     SI4900DY-T1-E3    
SI4900DY-T1-E3 specifications
Mounting Type：
Surface Mount
Supplier Device Package：
8-SOIC
Package / Case：
8-SOIC (0.154", 3.90mm Width)
Technology：
MOSFET (Metal Oxide)
FET Feature：
Logic Level Gate
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
3V @ 250µA
Configuration：
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)：
60V
Power - Max：
3.1W
Current - Continuous Drain (Id) @ 25°C：
5.3A
Gate Charge (Qg) (Max) @ Vgs：
20nC @ 10V
Rds On (Max) @ Id, Vgs：
58mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
665pF @ 15V
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Manufacturer's standard delivery time：be pending
Standard Pack Quantity：12772
quantity
unit price
International prices
2500
0.55
1375
5000
0.52
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12500
0.5
6250
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