SI4890DY-T1-E3

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SI4890DY-T1-E3

MOSFET N-CH 30V 11A 8-SOIC

part Number：

SI4890DY-T1-E3

manufacturer：

Vishay / Siliconix

category：

Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >

describe：

MOSFET N-CH 30V 11A 8-SOIC

RoHS：

YES

：

SI4890DY-T1-E3 SI4890DY-T1-E3

SI4890DY-T1-E3 specifications

Mounting Type：

Surface Mount

Supplier Device Package：

8-SOIC

Package / Case：

8-SOIC (0.154", 3.90mm Width)

FET Type：

N-Channel

Technology：

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)：

4.5V, 10V

Operating Temperature：

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)：

30 V

Vgs (Max)：

±25V

Power Dissipation (Max)：

2.5W (Ta)

Gate Charge (Qg) (Max) @ Vgs：

20 nC @ 5 V

Current - Continuous Drain (Id) @ 25°C：

11A (Ta)

Rds On (Max) @ Id, Vgs：

12mOhm @ 11A, 10V

Vgs(th) (Max) @ Id：

800mV @ 250µA (Min)

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Quick inquiry

Manufacturer's standard delivery time：be pending

Standard Pack Quantity：4100

quantity

unit price

International prices

2500

1.41

3525

5000

1.35

6750

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