SI4464DY-T1-E3
MOSFET N-CH 200V 1.7A 8SO
part Number：
SI4464DY-T1-E3
Alternative Model：
SI4464DY-T1-GE3 , IRF7465TRPBF , MRF151G , FDS2670
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 200V 1.7A 8SO
RoHS：
YES
SI4464DY-T1-E3 specifications
Mounting Type：
Surface Mount
Supplier Device Package：
8-SOIC
Package / Case：
8-SOIC (0.154", 3.90mm Width)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
6V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Power Dissipation (Max)：
1.5W (Ta)
Vgs(th) (Max) @ Id：
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：
18 nC @ 10 V
Drain to Source Voltage (Vdss)：
200 V
Current - Continuous Drain (Id) @ 25°C：
1.7A (Ta)
Rds On (Max) @ Id, Vgs：
240mOhm @ 2.2A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：4442
quantity
unit price
International prices
2500
0.62
1550
5000
0.58
2900
12500
0.55
6875
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