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SI4463BDY-T1-E3
MOSFET P-CH 20V 9.8A 8SO
part Number：
SI4463BDY-T1-E3
Alternative Model：
SPVM110200  ,  BSS123  ,  SPHV15-01ETG-C  ,  SI4463CDY-T1-GE3  ,  SI53154-A01AGM  ,  SI4463BDY-T1-GE3  ,  SI4925DDY-T1-GE3  ,  BSS123  ,  SI4835DDY-T1-GE3  ,  FDB3632  ,  BAT54LT1G  ,  B82790S0513N201
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe：
MOSFET P-CH 20V 9.8A 8SO
RoHS：
YES
：
SI4463BDY-T1-E3     SI4463BDY-T1-E3    
SI4463BDY-T1-E3 specifications
Mounting Type：
Surface Mount
Supplier Device Package：
8-SOIC
Package / Case：
8-SOIC (0.154", 3.90mm Width)
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Power Dissipation (Max)：
1.5W (Ta)
Drain to Source Voltage (Vdss)：
20 V
Vgs (Max)：
±12V
Drive Voltage (Max Rds On, Min Rds On)：
2.5V, 10V
Gate Charge (Qg) (Max) @ Vgs：
56 nC @ 4.5 V
Vgs(th) (Max) @ Id：
1.4V @ 250µA
Current - Continuous Drain (Id) @ 25°C：
9.8A (Ta)
Rds On (Max) @ Id, Vgs：
11mOhm @ 13.7A, 10V
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Manufacturer's standard delivery time：be pending
Standard Pack Quantity：16045
quantity
unit price
International prices
2500
0.76
1900
5000
0.74
3700
12500
0.72
9000
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