SI4447DY-T1-E3
MOSFET P-CH 40V 3.3A 8SO
part Number：
SI4447DY-T1-E3
Alternative Model：
IRFR6215TRPBF , SI4447DY-T1-GE3 , MMZ1608B221CTAH0 , MIC5281-5.0YMME , FSV15150V , B57330V2103F260 , 0436500202 , 0430450622 , C1F 5 , LM26CIM5-NPA/NOPB , BSS138 , DDZ17-7 , MMBTA92LT1G
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET P-CH 40V 3.3A 8SO
RoHS：
YES
SI4447DY-T1-E3 specifications
Mounting Type：
Surface Mount
Supplier Device Package：
8-SOIC
Package / Case：
8-SOIC (0.154", 3.90mm Width)
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
40 V
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Vgs(th) (Max) @ Id：
2.2V @ 250µA
Vgs (Max)：
±16V
Power Dissipation (Max)：
1.1W (Ta)
Current - Continuous Drain (Id) @ 25°C：
3.3A (Ta)
Gate Charge (Qg) (Max) @ Vgs：
14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds：
805 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On)：
15V, 10V
Rds On (Max) @ Id, Vgs：
72mOhm @ 4.5A, 15V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：7233
quantity
unit price
International prices
2500
0.33
825
5000
0.32
1600
12500
0.3
3750
25000
0.29
7250
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