SI4446DY-T1-E3
MOSFET N-CH 40V 3.9A 8SO
part Number:
SI4446DY-T1-E3
Alternative Model:
SI4840BDY-T1-GE3
manufacturer:
Vishay / Siliconix
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 40V 3.9A 8SO
RoHS:
YES
SI4446DY-T1-E3 specifications
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC
Package / Case:
8-SOIC (0.154", 3.90mm Width)
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Operating Temperature:
-55°C ~ 150°C (TJ)
Vgs (Max):
±12V
Power Dissipation (Max):
1.1W (Ta)
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 4.5 V
Current - Continuous Drain (Id) @ 25°C:
3.9A (Ta)
Vgs(th) (Max) @ Id:
1.6V @ 250µA
Rds On (Max) @ Id, Vgs:
40mOhm @ 5.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds:
700 pF @ 20 V
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Standard Pack Quantity:1600
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