SI4435BDY-T1-E3
MOSFET P-CH 30V 7A 8SO
part Number：
SI4435BDY-T1-E3
Alternative Model：
SI4435DDY-T1-GE3 , SI4435DYTRPBF , SI4435FDY-T1-GE3 , FDS4435BZ
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET P-CH 30V 7A 8SO
RoHS：
YES
SI4435BDY-T1-E3 specifications
Mounting Type：
Surface Mount
Supplier Device Package：
8-SOIC
Package / Case：
8-SOIC (0.154", 3.90mm Width)
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Power Dissipation (Max)：
1.5W (Ta)
Drain to Source Voltage (Vdss)：
30 V
Vgs(th) (Max) @ Id：
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：
70 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C：
7A (Ta)
Rds On (Max) @ Id, Vgs：
20mOhm @ 9.1A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
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